Single Step Cryogenic SF6/O2 Plasma Etching Process for the Development of Inertial Devices
نویسندگان
چکیده
Potential application of the high aspect ratio cryogenic SF6/O2 plasma ething process for developing trench based inertial micromechanical devices with capacitive sensing, is investigated and demonstrated. An ICtechnology compatible process flow involving anodic bonding of silicon to glass and plasma etching as a single post processing step is identified. It involves a novel method for front-to-backside patern alignment.
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